gallium arsenide
英
美 [ˈɡæliəm ˈɑrsəˌnaɪd]
n. 砷化镓（Ga-As）（一种合成化合物，主要用作半导体材料）
双语例句
- Average Conductivity of Complementary-Error and Gaussian Doped Layers in Gallium Arsenide
砷化镓中余误差和高斯掺杂层的平均电导 - They hope to extend their life further by using silicon or carbon, the atomic nuclei of which interfere less with the entangled electrons than do those of gallium arsenide.
他们希望可以通过使用硅或碳量子阱来进一步提高寿命，因为与砷化镓相比，这两种元素的原子核与缠结电子之间干扰较小。 - This paper discussed the propagation characterstics of surface acoustic wave, the screening of buried conductive layer and the reflection of metal matrix in gallium arsenide acoustic charge transport ( ACT) devices.
本文讨论了埋沟砷化镓声电输运器件中声表面波传播特性，金属栅阵列的散射特性和导电理层对表面波的屏蔽特性。 - Study on the cell structure in semi-insulation gallium arsenide
用x射线形貌研究半绝缘砷化镓单晶胞状结构 - Gallium Arsenide ( GaAs) is important compound semiconductor material. It has high electron transfer rate and direct transition energy band structure. GaAs is fit to be made into high frequency, high speed, endure heat, anti-radiation and luminescence apparatus.
砷化镓（GaAs）是一种重要的化合物半导体材料，具有电子迁移率高、直接跃迁型能带结构等优点，适合于制造高频、高速、耐高温、抗辐射和发光器件。 - Preparation of a high purity gallium arsenide monocrystal by doping with trace tin and its heat treatment
反掺锡高纯度砷化镓单晶的制备及热处理 - Gallium arsenide ultrared lighting transistor a purple variety of the ruby spinel.
砷化镓红外发光晶体管一种紫色的红尖晶石。 - With the development of semiconductor industry, semiconductor ceramic material such as single silicon, gallium arsenide and silicon carbide, etc, is extensive used in this field.
随着半导体工业的飞速发展，单晶硅、砷化镓和碳化硅等半导体陶瓷材料在此领域得到广泛应用。 - An automatic system for the measurement of two-dimensional distribution of resistivity of semi-insulating gallium arsenide wafer with three electrode guard method is presented in this paper. In actual application, the fluctuation of temperature and abnormal data obtained would influence the results of the measurement seriously.
本文介绍了三电极保护法半绝缘砷化镓材料电阻率二维分布自动测量系统，在实际应用中，温度波动、异常数据对测量结果产生严重影响，为此我们提出了一些措施。 - Photo-Ionization Effects in High Gain Gallium Arsenide Photoconductive Semiconductor Switches
高增益砷化镓光导开关中的光致电离效应